PART |
Description |
Maker |
SAK-C164CI-8EM SAF-C164CI-8E25MD-STEP SAF-C164CI-8 |
Compact Microcontrollers for Motor-Drive applications 16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 25 MHz 16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K OTP, 2 K RAM, CAN, Drive Control Unit, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - ROMless, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, enh. Power Saving features, 20 MHz 48Kbyte ROM; 20 (25MHz) MHz; V(dd): -0.5to 6.5V; V(in): -0.5 to 0.5V; 10mA; 1.5W; 16-bit single chip microcontoller
|
Infineon
|
MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
|
LET9130 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
LET21008 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
LET9045S 9334 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE From old datasheet system
|
http:// STMICROELECTRONICS[STMicroelectronics]
|
MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc Freescale Semiconductor...
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
1011LD300 |
RF Power Transistors: AVIONICS 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
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ADPOW[Advanced Power Technology]
|